Low Voltage Organic Field Effect Light Emitting Transistors with Vertical Geometry
Melek Uygun1, Savaş Berber2*
1Altinbas University, İstanbul, Turkey
2Gebze Technical University, Kocaeli, Turkey
* Corresponding author: savasberber@gtu.edu.tr
Presented at the 4th International Symposium on Innovative Approaches in Engineering and Natural Sciences (ISAS WINTER-2019 (ENS)), Samsun, Turkey, Nov 22, 2019
SETSCI Conference Proceedings, 2019, 9, Page (s): 437-440 , https://doi.org/10.36287/setsci.4.6.112
Published Date: 22 December 2019 | 853 6
Abstract
The devices developed in the field of organic electronics in recent years are on the technological applications and development of organic electronic devices using organic semiconductor films. The main applications of the organic electronic revolution are; Electrochromic Device, Organic Light Emitting Diodes (OLED), Organic Field Effect Transistors (OFET). Among these devices, OLED technology has taken its place in the commercial market in the last five years and has started to be used in our daily life in a short time. The efficiency of OFET devices is related to the operation of the devices at low voltage. This is only possible if the load carriers in the channel of the OFET have a low distance. A new field of research is the ability to implement two or more features on a single device, in the construction of integrated devices. Light emitting transistors (OLEFET), where light emission and current modulation are collected in a single device, are the most intensively studied devices. In this study, ITO substrate, source and drain electrodes were made from aluminum electrode structured organic field effect OLEFETs. In the study of instead of polymer dielectric PVA, PMMA polymer material which is mostly used in OFET construction was preferred.
Keywords - Organic Electronics, Semiconductor, Organic Light Emitting Diode, Organic Transistor, Organic Light Emitting Transistor
References
[1] Koezuka H., Tsumura A., Ando T., (1987), “Field-Effect Transistor with Polythiophene Thin Film”, Synthetic Metals, 18, 699-704.
[2] Chen J., Reed M. A., (2002), “Electronic Transport of Molecular Systems”, Chemical Physics, 281, 127-145.
[3] Sirringhaus H., Tessler N., Friend R. H., (1998), “Integrated Optoelectronic Devices Based on Conjugated Polymers”, Science, 280, 1741-1744.
[4] Nakano T., Doi S. Noguchi T., Ohnishi T., Iyechika Y., (1991), “Organic Electroluminescence Device”, European Patent, 0443861A3.
[5] Katz H., Huang J., (2009), “Thin Film Organic Electronic Devices”, Annual Review of Materials Research, 39, 71-92.
[6] Sun Y., Lu X., Lin S., Kettle J., Yeates S. G., Song A., (2010), “Polythiophene-Based Field-Effect Transistors with Enhanced Air Stability”, Organic Electronics, 11, 351-355.
[7] Brutting W., Berleb S., Muckl A. G., (2001), “Device Physics of Organic Light Emitting Diodes Based on Molecular Materials”, Organic Electronics, 2, 1-36.
[8] T. Sekitani, U. Zschieschang, H. Klauk, T. Someya, “Flexible organic transistors and circuits with extreme bending stability”, Nat. Mater. 2010, 9, 1015.
[9] H. L. Dong, X. L. Fu, J. Liu, Z. R. Wang, W. P. Hu, “25th Anniversary Article: Key Points for High Mobility Organic Field Effect Transistors”, Adv. Mater. 2013, 25, 6158.
[10] H. Sirringhaus, “25th Anniversary Article: Organic Field‐Effect Transistors: The Path Beyond Amorphous Silicon”, Adv. Mater. 2014, 26, 1319.
[11] Y. Diao, L. Shaw, Z. Bao, S. C. B. Mannsfeld, “Morphology control strategies for solution-processed organic semiconductor thin films.”, Energy Environ. Sci.
2014, 7, 2145.
[12] L. Wang, G. Nan, X. Yang, Q. Peng, Q. Li, Z. Shuai, “Computational methods for design of organic materials with high charge mobility”, Chem. Soc.
Rev. 2010, 39, 423.
[13] J. Zaumseil, H. Sirringhaus, “Electron and Ambipolar Transport in Organic Field-Effect Transistors”, Chem. Rev. 2007, 107, 1296.
[14] M. Muccini, “A bright future for organic field-effect transistors”, Nat. Mater. 2006, 5, 605.
[15] a) E. Tedesco, F. Della Sala, L. Favaretto, G. Barbarella, D. Albesa-
Jové, D. Pisignano, G. Gigli, R. Cingolani, K. D. M. Harris, J. Am.
Chem. Soc. 2003, 125, 12 277.
[16] R. Capelli, F. Dinelli, M. A. Loi, M. Murgia, R. Zamboni and M. Muccini, “ Ambipolar organic light-emitting transistors employing heterojunctions of n-type and p-type materials as the active layer”, J. Physic.: Condens. Matter 18 (2006) s2127-s2138
[17] S. Zhang, C. Zhu, J. K. O. Sin, and P. K. T. Mok, “A novel ultrathin elevated channel low-temperature poly-Si TFT,” IEEE Electron Device Lett., vol. 20, pp. 569–571, Nov. 1999.
[18] Kymissis I., (2009), “Organic Field Effect Transistors Theory, Fabrication and Characterization”, 1 st Edition, Springer.
[19] Tsumura A., Koezuka H., Fuchigami H., (1991), “Field-Effect Transistor with a Conducting Polymer Film”, Synthetic Metals, 41(3), 1181-1184.
[20] Ma L., Yang Y., (2004), “Unique Architecture and Concept For High-Performance Organic Transistors”, Applied Physics Letters, 85, 5084-5086.
[21] L. Ma, Y. Yang, “Unique Architecture And Concept For High-Performance Organic Transistors”, Appl. Phys. Lett. 2004, 85, 5084.
[22] J. Liu, H. Gao, H. Dong, J. Zhu, and W. Hu, “Vertical Organic Field-Effect Transistors”, J.Appl. Phys. 110, 094508 (2011).
[23] M. Uygun, “Some Applications of Self-Assembling Structures in Organic Electronic Devices”, PhD. Thesis, GYTE, Kocaeli, Turkey, Sep., 2014.
[24] Rossi L., Seidel K. F., Machado W. S., Hümmelgen I. A., (2011), “Low Voltage Vertical Organic Field-Effect Transistor with Polyvinyl Alcohol as Gate Insulator”, Journal of Applied Physics, 110(9), 508-511.