{ "article_id": 1071, "public_id": "bd628d51-4853-4206-9b09-cebcac5ab4b7", "internal_identifier": null, "source_identifier": "42:76", "status": "published", "type": "research_article", "title": "Faz Değişimli Malzemeler için Yüksek Hızlı Elektriksel Ölçüm Tekniği", "title_secondary": null, "abstract": "Faz değişimli malzemeler, kristal yapıları sıcaklığa bağlı olarak değişen, kristal ve amorf fazlarında elektriksel ve optik özelliklerinde büyük farklılıklar gösteren malzemelerdir. Günümüzde, başta Flash ve DRAM hafıza teknolojilerine alternatif olarak görülen faz değişimli hafıza aygıtları (Phase Change Memory: PCM) olmak üzere, CD-RW, DVD-RW, Blu-Ray gibi optik depolama aygıtları, ekran, sensor, RF uygulamalarında yaygın olarak kullanılmaktadırlar. Bu malzemeler kristal fazında düşük elektriksel direnç ve yüksek optik yansıtma, amorf fazında ise yüksek elektriksel direnç ve düşük optik yansıtma özelliği göstermektedir. Uygulanan kısa süreli (nanosaniye seviyesinde) elektriksel sinyaller ile ya da optik olarak lazer darbeleri ile iki yönlü faz geçişi sağlanabilmektedir. Bu malzemelerin karakterizasyonunda kullanılan hızlı lazer ölçüm teknikleri malzemenin\r\noptik özelliklerini açığa çıkarıp elektriksel özelliklerini ölçememektedir. Ayrıca bu ölçümler aygıt büyüklüklerine nazaran çok daha büyük yüzeyler gerektirmektedir (~500 nm). Malzeme özelliklerinin faza göre değişkenlik göstermesi, yüksek hız ve yüksek operasyon sıcaklığı bu malzemelerin elektriksel karakterizasyonunu diğer katı hal elektronik malzemelerine göre zorlaştırmaktadır. Günümüzde yaygın olarak kullanılan elektriksel ölçüm teknikleri ise bu aygıtların operasyon hızına göre çok yavaş kalmakta ve operasyon esnasındaki yarı kararlı (metastable) durumdaki sıcaklığa bağlı elektriksel özelliklerini belirleyememektedir. Bu çalışmada faz değişimli malzemelerin kristal-amorf-kristal faz geçişleri esnasındaki sıcaklığa bağlı elektriksel özelliklerinin belirlenmesi ve kristalleşme süreçlerinin izlenmesi için yüksek hızlı ölçüm tekniği geliştirilmiştir. Bu\r\nçalışmayla yaygın olarak kullanılan yavaş elektriksel ölçüm tekniklerinden elde edilen sonuçlara kıyasla, yüksek hızlı uygulamalardaki çalışma koşullarına yakın bir ortam sağlanarak malzemenin daha gerçekçi elektriksel özellikleri belirlenmiştir. Ayrıca elektriksel özelliklerin zamanla değişimi izlenerek malzemenin kristalleşme süreci, direncin zamanla kayması gibi konularda etkin elektriksel iletim mekanizmaları hakkında yaklaşımda bulunulmuştur.  ", "language": "tr", "english_title": "High-Speed ​​Electrical Measurement Technique for Phase Change Materials", "english_abstract": "Phase change materials are materials whose crystal structures change with temperature, exhibiting significant differences in electrical and optical properties in their crystalline and amorphous phases. Today, they are widely used in phase change memory devices (PCM), primarily as an alternative to Flash and DRAM memory technologies, as well as in optical storage devices such as CD-RW, DVD-RW, and Blu-Ray, and in displays, sensors, and RF applications. These materials exhibit low electrical resistance and high optical reflectivity in their crystalline phase, and high electrical resistance and low optical reflectivity in their amorphous phase. Bidirectional phase transitions can be achieved with short-duration (nanosecond level) electrical signals or optically with laser pulses. High-speed laser measurement techniques used in the characterization of these materials reveal their optical properties but cannot measure their electrical properties. Furthermore, these measurements require much larger surfaces (~500 nm) compared to the size of the devices. The phase-dependent variability of material properties, high speed, and high operating temperature make the electrical characterization of these materials more difficult compared to other solid-state electronic materials. Currently, commonly used electrical measurement techniques are too slow compared to the operating speed of these devices and cannot determine the temperature-dependent electrical properties in the metastable state during operation. In this study, a high-speed measurement technique has been developed to determine the temperature-dependent electrical properties of phase-change materials during crystal-amorphous-crystal phase transitions and to monitor crystallization processes. Compared to the results obtained from commonly used slow electrical measurement techniques, this study provides an environment close to the operating conditions in high-speed applications, allowing for the determination of more realistic electrical properties of the material. Furthermore, by monitoring the time variation of electrical properties, an approach has been taken regarding effective electrical conduction mechanisms in areas such as the crystallization process and the time shift of resistance.", "doi": null, "doi_url": null, "resource_url": "https://www.set-science.com/a/bd628d51-4853-4206-9b09-cebcac5ab4b7", "pdf_url": "https://www.set-science.com/a/bd628d51-4853-4206-9b09-cebcac5ab4b7/pdf", "og_image": "https://www.set-science.com/assets/img/og-card-v2.png", "authors": [ { "public_id": "9deb6364-1d98-4dc6-b14c-5efb7eb43e38", "given": "Faruk ", "family": "Dirisağlık  ", "full": "Faruk  Dirisağlık  ", "literal": null, "orcid": null, "orcid_url": null, "email": "fdirisaglik@ogu.edu.tr", "corresponding": true, "sequence": "first", "affiliations": [ { "name": "Eskişehir Osmangazi Üniversitesi", "department": null, "country": null, "country_code": null, "ror": null, "ror_url": null } ] }, { "public_id": "6f8b4ceb-996c-40c7-9b4b-4b5b07f08f0a", "given": "Ali ", "family": "Gökırmak  ", "full": "Ali  Gökırmak  ", "literal": null, "orcid": null, "orcid_url": null, "email": "fdirisaglik@ogu.edu.tr", "corresponding": false, "sequence": "additional", "affiliations": [ { "name": "University of Connecticut", "department": null, "country": null, "country_code": null, "ror": null, "ror_url": null } ] } ], "keywords": [ "faz değişimli malzemeler", "elektriksel karakterizasyon", "kristalizasyon", "direnç kayması", "elektriksel iletim mekanizması" ], "translations": [ { "language": "en", "title": "High-Speed ​​Electrical Measurement Technique for Phase Change Materials", "abstract": "Phase change materials are materials whose crystal structures change with temperature, exhibiting significant differences in electrical and optical properties in their crystalline and amorphous phases. Today, they are widely used in phase change memory devices (PCM), primarily as an alternative to Flash and DRAM memory technologies, as well as in optical storage devices such as CD-RW, DVD-RW, and Blu-Ray, and in displays, sensors, and RF applications. These materials exhibit low electrical resistance and high optical reflectivity in their crystalline phase, and high electrical resistance and low optical reflectivity in their amorphous phase. Bidirectional phase transitions can be achieved with short-duration (nanosecond level) electrical signals or optically with laser pulses. High-speed laser measurement techniques used in the characterization of these materials reveal their optical properties but cannot measure their electrical properties. Furthermore, these measurements require much larger surfaces (~500 nm) compared to the size of the devices. The phase-dependent variability of material properties, high speed, and high operating temperature make the electrical characterization of these materials more difficult compared to other solid-state electronic materials. Currently, commonly used electrical measurement techniques are too slow compared to the operating speed of these devices and cannot determine the temperature-dependent electrical properties in the metastable state during operation. In this study, a high-speed measurement technique has been developed to determine the temperature-dependent electrical properties of phase-change materials during crystal-amorphous-crystal phase transitions and to monitor crystallization processes. Compared to the results obtained from commonly used slow electrical measurement techniques, this study provides an environment close to the operating conditions in high-speed applications, allowing for the determination of more realistic electrical properties of the material. Furthermore, by monitoring the time variation of electrical properties, an approach has been taken regarding effective electrical conduction mechanisms in areas such as the crystallization process and the time shift of resistance.", "keywords": [ "phase-change materials", "electrical characterization", "crystallization", "resistance drift", "electrical conduction mechanism" ] } ], "subjects": [], "subject_names": [], "published_date": "2019-06-01", "published_year": "2019", "received_date": null, "accepted_date": null, "volume": "4", "issue": null, "page_first": "404", "page_last": "407", "article_number": null, "conference": { "short_name": "ISAS2019-ENS", "full_title": "3rd International Symposium on Innovative Approaches in Scientific Studies (Engineering and Natural Sciences)", "name": "3rd International Symposium on Innovative Approaches in Scientific Studies (Engineering and Natural Sciences)", "acronym": "ISAS2019-ENS", "location": "Ankara, Türkiye", "start_date": "2019-04-19", "end_date": null, "public_id": "ed3b36e9-38cf-4aeb-a135-833c969cc89f" }, "proceedings": { "title": "3rd International Symposium on Innovative Approaches in Scientific Studies (Engineering and Natural Sciences)", "series_title": "Setsci conference indexing system", "publisher": "SET Technology", "isbn": null, "eisbn": null, "issn": "2618-6446", "eissn": null, "doi": null, "doi_prefix": null, "slug": "setsci-volume-4-2019-legacy-42", "public_id": "24d215ef-a545-4351-9725-6e9bdb167b3c", "url": "https://www.set-science.com/p/setsci-volume-4-2019-legacy-42" }, "license": { "name": "CC BY 4.0", "url": "https://creativecommons.org/licenses/by/4.0/", "code": "CC-BY-4.0", "open_access": true }, "copyright": { "holder": "SET Technology", "year": "2019" }, "funding_statement": null, "funders": [], "references": [ { "order": 1, "raw": "S. 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